Devi Chandni, Singhal Rahul, Silva Kleber da, Paschoal Waldomiro, Pettersson Håkan, Kumar Sandeep
Department of Physics, Central University of Rajasthan, Ajmer 305817, India.
Nanotechnology. 2020 Mar 20;31(23):235709. doi: 10.1088/1361-6528/ab78ad. Epub 2020 Feb 21.
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. This paper presents the first detailed study of transport mechanisms in single-crystalline InAs nanowires synthesized by a cheap solvothermal wet chemical method. From detailed analyses of temperature-dependent current-voltage characteristics, it was observed that contacted nanowires operate in a linear transport regime at biases below a critical cross-over voltage. For larger biases, the transport changes to space-charge-limited conduction assisted by traps. The characteristic parameters such as free electron concentration, trap concentration and energy distribution, and electron mobility were all calculated. It was demonstrated that the nanowires have key electrical properties comparable to those of InAs nanowires grown by molecular beam epitaxy. Our results might pave the way for cheap disruptive low-dimensional electronics such as resistive switching devices.
纳米线被广泛认为是未来颠覆性电子学和光子学中的关键元素。本文首次详细研究了通过廉价的溶剂热湿化学方法合成的单晶 InAs 纳米线中的输运机制。通过对温度依赖的电流 - 电压特性的详细分析，观察到接触的纳米线在低于临界交叉电压的偏压下处于线性输运 regime。对于较大的偏压，输运转变为由陷阱辅助的空间电荷限制传导。计算了诸如自由电子浓度、陷阱浓度和能量分布以及电子迁移率等特征参数。结果表明，这些纳米线具有与通过分子束外延生长的 InAs 纳米线相当的关键电学性质。我们的结果可能为诸如电阻式开关器件等廉价的颠覆性低维电子学铺平道路。
