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A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr and ZnO Quantum Dots.一种具有由CsPbBr和ZnO量子点复合而成的双有源层的新型光电晶体管器件。
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量子点及其应用。

Quantum Dots and Applications.

作者信息

Han Chang-Yeol, Kim Hyun-Sik, Yang Heesun

机构信息

Department of Materials Science and Engineering, Hongik University, Seoul 04066, Korea.

出版信息

Materials (Basel). 2020 Feb 18;13(4):897. doi: 10.3390/ma13040897.

DOI:10.3390/ma13040897
PMID:32085387
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7078908/
Abstract

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

摘要

正是量子点(QD)独特的尺寸依赖性带隙使其在各种应用中如此特别。它们引起了极大的兴趣,特别是在发光二极管和光伏电池等光电子领域,因为通过优化其合成过程,它们的光致发光特性可以得到显著改善。对其核壳异质结构的控制尤为重要且具有优势。然而,在基于量子点的器件能够完全取代当前的光电子技术之前,仍有一些挑战有待克服。本期特刊提供了高质量量子点合成及其应用的详细指南。在制造器件方面,调整量子点的光学特性以及处理与量子点相关界面中的工程缺陷以实现更高性能仍然是需要解决的重要问题。