Wang Han, Dai Yingying, Liu Zhongran, Xie Qidong, Liu Chao, Lin Weinan, Liu Liang, Yang Ping, Wang John, Venkatesan Thirumalai Venky, Chow Gan Moog, Tian He, Zhang Zhidong, Chen Jingsheng
Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
Adv Mater. 2020 Apr;32(14):e1904415. doi: 10.1002/adma.201904415. Epub 2020 Feb 24.
Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii-Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO /BiFeO heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.
由于其纳米级尺寸（<100 nm）和独特的动力学特性，拓扑保护磁态在未来的自旋电子学中具有多种潜在应用。然而，由于Dzyaloshinskii-Moriya相互作用（DMI）的相互作用范围较短，这些引人入胜的状态通常位于超薄系统的界面或表面。在此，通过层间交换耦合机制和界面DMI，成功地在一个40个晶胞（16 nm）的SrRuO层中创建了磁拓扑状态。通过控制反铁磁层和铁磁层的厚度，可以调制界面离子极化以及铁磁态和磁拓扑态之间的转变。利用微磁模拟，阐明了SrRuO/BiFeO异质结构中稳健磁斯格明子的形成和稳定性。厚层多铁性异质结构中的磁斯格明子对于拓扑电子学的发展以及通过反铁磁序将界面拓扑现象扩展到体材料提供一种实用方法很有前景。
