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探究金属/Tm₃Fe₅O₁₂体系中导致拓扑霍尔效应的界面Dzyaloshinskii-Moriya相互作用的来源。

Probing the Source of the Interfacial Dzyaloshinskii-Moriya Interaction Responsible for the Topological Hall Effect in Metal/Tm_{3}Fe_{5}O_{12} Systems.

作者信息

Lee Aidan J, Ahmed Adam S, Flores Jose, Guo Side, Wang Binbin, Bagués Nuria, McComb David W, Yang Fengyuan

机构信息

Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA.

出版信息

Phys Rev Lett. 2020 Mar 13;124(10):107201. doi: 10.1103/PhysRevLett.124.107201.

DOI:10.1103/PhysRevLett.124.107201
PMID:32216433
Abstract

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is responsible for the emergence of topological spin textures such as skyrmions in layered structures based on metallic and insulating ferromagnetic films. However, there is active debate on where the interfacial DMI resides in magnetic insulator systems. We investigate the topological Hall effect, which is an indication of spin textures, in Tm_{3}Fe_{5}O_{12} films capped with various metals. The results reveal that Pt, W, and Au induce strong interfacial DMI and topological Hall effect, while Ta and Ti cannot. This study also provides insights into the mechanism of electrical detection of spin textures in magnetic insulator heterostructures.

摘要

界面Dzyaloshinskii-Moriya相互作用(DMI)导致了基于金属和绝缘铁磁薄膜的层状结构中出现诸如斯格明子等拓扑自旋纹理。然而,关于界面DMI在磁绝缘体系统中的位置存在着激烈的争论。我们研究了覆盖有各种金属的Tm₃Fe₅O₁₂薄膜中的拓扑霍尔效应,这是自旋纹理的一种表现。结果表明,铂、钨和金会诱导出强烈的界面DMI和拓扑霍尔效应,而钽和钛则不会。这项研究还为磁绝缘体异质结构中自旋纹理的电学检测机制提供了见解。

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引用本文的文献

1
Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering.通过界面工程调控绝缘磁性氧化物中的Dzyaloshinskii-Moriya相互作用和自旋霍尔拓扑霍尔效应
Adv Sci (Weinh). 2024 Sep;11(34):e2403852. doi: 10.1002/advs.202403852. Epub 2024 Jul 10.