Zamora Iván, Ledesma Eyglis, Uranga Arantxa, Barniol Núria
Departament d'Enginyeria Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.
Sensors (Basel). 2020 Feb 22;20(4):1205. doi: 10.3390/s20041205.
This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric micromachined ultrasonic transducer (CMOS-AlN-PMUT). The system was designed using the 0.13-μm Silterra CMOS process and the MEMS-on-CMOS platform, which allowed for the implementation of an AlN PMUT on top of the CMOS-integrated circuit. The HV transmitter drives a column of six 80-μm-square PMUTs excited with 32 V in order to generate enough acoustic pressure at a 2.1-mm axial distance. On the reception side, another six 80-μm-square PMUT columns convert the received echo into an electric charge that is amplified by the receiver front-end amplifier. A comparative analysis between a voltage front-end amplifier (VA) based on capacitive integration and a charge-sensitive front-end amplifier (CSA) is presented. Electrical and acoustic experiments successfully demonstrated the functionality of the designed low-power analog front-end circuitry, which outperformed a state-of-the art front-end application-specific integrated circuit (ASIC) in terms of power consumption, noise performance, and area.
本文介绍了一种用于超声成像系统的模拟前端收发器,该收发器基于高压(HV)发射器、低噪声前端放大器(RX)和互补金属氧化物半导体、氮化铝、压电微机械超声换能器(CMOS-AlN-PMUT)。该系统采用0.13μm Silterra CMOS工艺和CMOS上的MEMS平台进行设计,这使得在CMOS集成电路顶部能够实现AlN PMUT。高压发射器驱动一列六个80μm见方的PMUT,用32V进行激励,以便在2.1mm的轴向距离处产生足够的声压。在接收端,另外六个80μm见方的PMUT列将接收到的回波转换为电荷,该电荷由接收器前端放大器进行放大。本文还对基于电容积分的电压前端放大器(VA)和电荷敏感前端放大器(CSA)进行了对比分析。电学和声学实验成功证明了所设计的低功耗模拟前端电路的功能,该电路在功耗、噪声性能和面积方面优于一款先进的前端专用集成电路(ASIC)。