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用于氮化铝压电微机电系统(PMUT)阵列的小型化0.13微米互补金属氧化物半导体(CMOS)前端模拟电路

Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays.

作者信息

Zamora Iván, Ledesma Eyglis, Uranga Arantxa, Barniol Núria

机构信息

Departament d'Enginyeria Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain.

出版信息

Sensors (Basel). 2020 Feb 22;20(4):1205. doi: 10.3390/s20041205.

DOI:10.3390/s20041205
PMID:32098323
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7071051/
Abstract

This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric micromachined ultrasonic transducer (CMOS-AlN-PMUT). The system was designed using the 0.13-μm Silterra CMOS process and the MEMS-on-CMOS platform, which allowed for the implementation of an AlN PMUT on top of the CMOS-integrated circuit. The HV transmitter drives a column of six 80-μm-square PMUTs excited with 32 V in order to generate enough acoustic pressure at a 2.1-mm axial distance. On the reception side, another six 80-μm-square PMUT columns convert the received echo into an electric charge that is amplified by the receiver front-end amplifier. A comparative analysis between a voltage front-end amplifier (VA) based on capacitive integration and a charge-sensitive front-end amplifier (CSA) is presented. Electrical and acoustic experiments successfully demonstrated the functionality of the designed low-power analog front-end circuitry, which outperformed a state-of-the art front-end application-specific integrated circuit (ASIC) in terms of power consumption, noise performance, and area.

摘要

本文介绍了一种用于超声成像系统的模拟前端收发器,该收发器基于高压(HV)发射器、低噪声前端放大器(RX)和互补金属氧化物半导体、氮化铝、压电微机械超声换能器(CMOS-AlN-PMUT)。该系统采用0.13μm Silterra CMOS工艺和CMOS上的MEMS平台进行设计,这使得在CMOS集成电路顶部能够实现AlN PMUT。高压发射器驱动一列六个80μm见方的PMUT,用32V进行激励,以便在2.1mm的轴向距离处产生足够的声压。在接收端,另外六个80μm见方的PMUT列将接收到的回波转换为电荷,该电荷由接收器前端放大器进行放大。本文还对基于电容积分的电压前端放大器(VA)和电荷敏感前端放大器(CSA)进行了对比分析。电学和声学实验成功证明了所设计的低功耗模拟前端电路的功能,该电路在功耗、噪声性能和面积方面优于一款先进的前端专用集成电路(ASIC)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/92cd9434c9cc/sensors-20-01205-g018.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/a635805bde9c/sensors-20-01205-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/8dfec7f3a286/sensors-20-01205-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/b4711dc0f215/sensors-20-01205-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/b417ef5ec59e/sensors-20-01205-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/27e8bdd6bd69/sensors-20-01205-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/92cd9434c9cc/sensors-20-01205-g018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/f8421f445f44/sensors-20-01205-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/38cb801a7fc1/sensors-20-01205-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/a180ce16ab7b/sensors-20-01205-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/a635805bde9c/sensors-20-01205-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/8dfec7f3a286/sensors-20-01205-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/b4711dc0f215/sensors-20-01205-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/58cde0dbaca0/sensors-20-01205-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/7787372bfef9/sensors-20-01205-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/5845f3c1fb57/sensors-20-01205-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/0f400e990101/sensors-20-01205-g015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/b417ef5ec59e/sensors-20-01205-g016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/27e8bdd6bd69/sensors-20-01205-g017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b5c4/7071051/92cd9434c9cc/sensors-20-01205-g018.jpg

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