Kim Hyeonjeong, Yoo Songyi, Kang In-Man, Cho Seongjae, Sun Wookyung, Shin Hyungsoon
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Korea.
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea.
Micromachines (Basel). 2020 Feb 23;11(2):228. doi: 10.3390/mi11020228.
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area.
最近，具有多晶硅体的单晶体管动态随机存取存储器（1T-DRAM）单元（多晶硅1T-DRAM）作为取代传统单晶体管单电容器动态随机存取存储器（1T-1C DRAM）的候选者受到了关注。多晶硅1T-DRAM能够以具有成本效益的方式实现绝缘体上硅（SOI）结构和三维（3D）堆叠架构，以提高集成密度。然而，关于多晶硅1T-DRAM瞬态特性的研究仍然不足。在本文中，通过TCAD模拟，我们研究了多晶硅和硅体1T-DRAM中存储机制的差异。硅1T-DRAM单元的数据状态由存储在浮体（FB）中的空穴数量决定，而多晶硅1T-DRAM单元的状态则取决于捕获在其晶界（GB）中的电子数量。这意味着多晶硅1T-DRAM可以通过将GB用作具有小FB区域的薄体器件中的存储区域来执行存储操作。
