Yu Wenlong, Elias Jamie A, Chen Kuan-Wen, Baumbach Ryan, Nenoff Tina M, Modine Normand A, Pan Wei, Henriksen Erik A
Sandia National Labs, Albuquerque, New Mexico, 87185, USA.
Department of Physics, Washington University in St. Louis, 1 Brookings Dr., St. Louis, MO, 63130, USA.
Sci Rep. 2020 Feb 26;10(1):3537. doi: 10.1038/s41598-020-60545-x.
Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithium-decorated ZrTe thin films. We observe that the surface states in ZrTe are robust against Li adsorption. Both the surface electron density and the associated Berry phase are remarkably robust to adsorption of Li atoms. Fitting to the Hall conductivity data reveals that there exist two types of bulk carriers: those for which the carrier density is insensitive to Li adsorption, and those whose density decreases during initial Li depositions and then saturates with further Li adsorption. We propose this dependence is due to the gating effect of a Li-adsorption-generated dipole layer at the ZrTe surface.
通过结合单晶生长、涉及表面吸附原子原位沉积的实验以及补充建模，我们研究了锂修饰的ZrTe薄膜的电子输运性质。我们观察到ZrTe中的表面态对锂吸附具有鲁棒性。表面电子密度和相关的贝里相位对锂原子的吸附都非常鲁棒。对霍尔电导率数据的拟合表明存在两种类型的体载流子：一类载流子密度对锂吸附不敏感，另一类在初始锂沉积期间密度降低，然后随着进一步的锂吸附而饱和。我们认为这种依赖性是由于ZrTe表面锂吸附产生的偶极层的门控效应。
