Wu Xiaofeng, Jia Ruofei, Pan Jing, Zhang Xiujuan, Jie Jiansheng
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
Nanoscale Horiz. 2020 Mar 2;5(3):454-472. doi: 10.1039/c9nh00694j.
Organic field-effect transistors (OFETs) are fundamental building blocks for flexible and large-area electronics due to their superior solution-processability, flexibility and stretchability. OFETs with high ideality are essential to their practical applications. In reality, however, many OFETs still suffer from non-ideal behaviors, such as gate-dependent mobility, which thus hinders the extraction of their intrinsic performance. It is much desired to gain a comprehensive understanding of the origins of these non-idealities. OFETs are primarily interface-related devices, and hence their performance and ideality are highly dependent on the interface properties between each device component. This review will focus on the recent progress in investigating the non-ideal behaviors of OFETs. In particular, the roles of interfaces, including the organic semiconductor (OSC)/dielectric interface, OSC/electrode interface and OSC/atmosphere interface, in determining the ideality of OFETs are summarized. Viable approaches through interface optimization to improve the device ideality are also reviewed. Finally, an overview of the outstanding challenges as well as the future development directions for the construction of ideal OFETs is given.
有机场效应晶体管（OFETs）由于其卓越的溶液可加工性、柔韧性和可拉伸性，是柔性和大面积电子器件的基本构建单元。具有高理想度的OFETs对其实际应用至关重要。然而，在实际中，许多OFETs仍然存在非理想行为，例如与栅极相关的迁移率，这从而阻碍了其本征性能的提取。非常希望全面了解这些非理想性的起源。OFETs主要是与界面相关的器件，因此它们的性能和理想度高度依赖于每个器件组件之间的界面特性。本综述将聚焦于研究OFETs非理想行为的最新进展。特别地，总结了界面的作用，包括有机半导体（OSC）/电介质界面、OSC/电极界面和OSC/大气界面，在确定OFETs理想度方面的作用。还综述了通过界面优化来提高器件理想度的可行方法。最后，给出了构建理想OFETs的突出挑战以及未来发展方向的概述。
