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具有厚度不均匀性和过渡层的非均匀薄膜的光谱椭偏测量法。

Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers.

作者信息

Ohlídal Ivan, Vohánka Jiří, Buršíková Vilma, Franta Daniel, Čermák Martin

出版信息

Opt Express. 2020 Jan 6;28(1):160-174. doi: 10.1364/OE.28.000160.

DOI:10.1364/OE.28.000160
PMID:32118947
Abstract

In this paper the complete optical characterization of an inhomogeneous polymer-like thin film of SiOCH exhibiting a thickness non-uniformity and transition layer at the boundary between the silicon substrate and this film is performed using variable angle spectroscopic ellipsometry. The Campi-Coriasso dispersion model was utilized for describing the spectral dependencies of the optical constants of the SiOCH thin film and transition layer. The multiple-beam interference model was used for expressing inhomogeneity of the SiOCH thin film. The thickness non-uniformity of this film was taken into account by means of the averaging of the elements of the Mueller matrix performed using the thickness distribution for the wedge-shaped non-uniformity. The spectral dependencies of the optical constants of the SiOCH thin film at the upper and lower boundaries together with the spectral dependencies of the optical constants of the transition layer were determined. Furthermore, the thickness values of the SiOCH film and transition layer, profiles of the optical constants of the SiOCH thin film and the rms value of local thicknesses corresponding to its thickness non-uniformity were determined. Thus, all the parameters characterizing this complicated film were determined without any auxiliary methods.

摘要

在本文中,使用可变角度光谱椭偏仪对具有厚度不均匀性且在硅衬底与该薄膜之间的边界处存在过渡层的类聚合物非均匀SiOCH薄膜进行了完整的光学表征。利用坎皮 - 科里亚索色散模型来描述SiOCH薄膜和过渡层光学常数的光谱依赖性。使用多光束干涉模型来表示SiOCH薄膜的不均匀性。通过利用楔形不均匀性的厚度分布对穆勒矩阵元素进行平均,考虑了该薄膜的厚度不均匀性。确定了SiOCH薄膜上下边界处光学常数的光谱依赖性以及过渡层光学常数的光谱依赖性。此外,还确定了SiOCH薄膜和过渡层的厚度值、SiOCH薄膜光学常数的分布以及与其厚度不均匀性相对应的局部厚度的均方根值。因此,无需任何辅助方法就确定了表征这种复杂薄膜的所有参数。

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引用本文的文献

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