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具有复杂厚度不均匀性的非均匀薄膜的椭偏表征:应用于类聚合物非均匀薄膜

Ellipsometric characterization of inhomogeneous thin films with complicated thickness non-uniformity: application to inhomogeneous polymer-like thin films.

作者信息

Ohlídal Ivan, Vohánka Jiří, Buršíková Vilma, Šulc Václav, Šustek Štěpán, Ohlídal Miloslav

出版信息

Opt Express. 2020 Nov 23;28(24):36796-36811. doi: 10.1364/OE.412043.

Abstract

The method of variable angle spectroscopic ellipsometry usable for the complete optical characterization of inhomogeneous thin films exhibiting complicated thickness non-uniformity together with transition layers at their lower boundaries is presented in this paper. The inhomogeneity of these films is described by means of the multiple-beam interference model. The thickness non-uniformity is taken into account by averaging the elements of the Mueller matrix along the area of the light spot of the ellipsometer on the films. The local thicknesses are expressed using polynomials in the coordinates along the surfaces of the films. The efficiency of the method is illustrated by means of the optical characterization of a selected sample of the polymer-like thin film of SiOCH prepared by plasma enhanced chemical vapor deposition onto the silicon single crystal substrate. The Campi-Coriasso dispersion model is used to determine the spectral dependencies of the optical constants at the upper and lower boundaries of this film. The profiles of these optical constants are determined too. The thickness non-uniformity is described using a model with local thicknesses given by the polynomial with at most quadratic terms. In this way it is possible to determine the geometry of the upper boundary. The thickness and spectral dependencies of the optical constants of the transition layer are determined as well. Imaging spectroscopic reflectometry is utilized for confirming the results concerning the thickness non-uniformity obtained using ellipsometry.

摘要

本文介绍了一种可变角度光谱椭偏仪方法,该方法可用于对具有复杂厚度不均匀性且在其下边界带有过渡层的非均匀薄膜进行完整的光学表征。这些薄膜的不均匀性通过多光束干涉模型来描述。通过沿椭偏仪在薄膜上的光斑区域对穆勒矩阵元素进行平均,来考虑厚度的不均匀性。局部厚度用沿薄膜表面坐标的多项式来表示。通过对采用等离子体增强化学气相沉积法制备在硅单晶衬底上的类聚合物SiOCH薄膜的选定样品进行光学表征,来说明该方法的有效性。使用坎皮 - 科里亚索色散模型来确定该薄膜上下边界处光学常数的光谱依赖性。还确定了这些光学常数的分布。厚度不均匀性用一个模型来描述,该模型中局部厚度由最高为二次项的多项式给出。通过这种方式,可以确定上边界的几何形状。同时也确定了过渡层的厚度以及光学常数的光谱依赖性。利用成像光谱反射法来证实使用椭偏仪获得的关于厚度不均匀性的结果。

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