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含硫化铜(CuS)和碳对电极的ZnO/CdS光阳极的合成与性能评估

Synthesis and performance evaluation of ZnO/CdS photoanodes with copper sulfide (CuS) and carbon counter electrodes.

作者信息

More Pooja B, Jagtap Chaitali V, Kadam Vishal S, Naushad Mu, Naik Nithesh, Hiremath Pavan, M Pathan Habib

机构信息

Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune, Maharashtra, 411007, India.

Department of Chemistry, College of Science, King Saud University, P.O. Box 2455, Riyadh, 11451, Saudi Arabia.

出版信息

Sci Rep. 2024 Dec 30;14(1):31551. doi: 10.1038/s41598-024-74687-9.

DOI:10.1038/s41598-024-74687-9
PMID:39738059
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11685870/
Abstract

The present study demonstrates the synthesis of compact ZnO layers using CdS sensitized on ZnO as a photoanode with copper sulfide (CuS) and carbon as a counter electrode (CE). In this study, a compact ZnO layer was fabricated using the simple and low-cost successive ionic layer adsorption and reaction (SILAR) method, and CuS CE films were synthesized using the chemical bath deposition method. Various characterizations, such as X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), confirmed the formation of ZnO and CdS sensitizations on the ZnO . UV-visible spectroscopy revealed that the bandgaps of the ZnO and CuS films were 3.2 and 1.3 eV, respectively. Furthermore, the morphology of the ZnO films was optimized by varying the number of SILAR cycles. Scanning electron microscopy revealed the formation of a nanorod compact layer (CL) and the porous nature of the ZnO photoanode films. However, the porosity increased with the number of SILAR cycles. Various parameters, such as the current density, voltage, fill factor, and efficiency, were measured using the J-V characteristics. The highest 0.85% efficiency was achieved by using the ZnO compact film with 30 SILAR cycles for the CuS CE. Furthermore, the study revealed that the CuS counter electrode had a higher electrocatalytic response than the carbon CE.

摘要

本研究展示了以硫化镉敏化的氧化锌作为光阳极、硫化铜和碳作为对电极(CE)来合成致密氧化锌层。在本研究中,采用简单且低成本的连续离子层吸附与反应(SILAR)方法制备了致密氧化锌层,并使用化学浴沉积法合成了硫化铜对电极薄膜。通过各种表征手段,如X射线衍射(XRD)和X射线光电子能谱(XPS),证实了氧化锌上氧化锌和硫化镉敏化层的形成。紫外可见光谱表明,氧化锌和硫化铜薄膜的带隙分别为3.2和1.3电子伏特。此外,通过改变SILAR循环次数优化了氧化锌薄膜的形貌。扫描电子显微镜揭示了纳米棒致密层(CL)的形成以及氧化锌光阳极薄膜的多孔性质。然而,孔隙率随着SILAR循环次数的增加而增大。使用J-V特性测量了各种参数,如电流密度、电压、填充因子和效率。对于硫化铜对电极,使用具有30次SILAR循环的氧化锌致密薄膜实现了最高0.85%的效率。此外,研究表明硫化铜对电极比碳对电极具有更高的电催化响应。

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