Wang Li, Nilsson Zach N, Tahir Muhammad, Chen Hua, Sambur Justin B
Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523, United States.
Department of Physics, Colorado State University, Fort Collins, Colorado 80523, United States.
ACS Appl Mater Interfaces. 2020 Apr 1;12(13):15034-15042. doi: 10.1021/acsami.9b21230. Epub 2020 Mar 17.
Substrates influence the electrical and optical properties of monolayer (ML) MoS in field-effect transistors and photodetectors. Photoluminescence (PL) and Raman spectroscopy measurements have shown that conducting substrates can vary the doping concentration and influence exciton decay channels in ML-MoS. Doping and exciton decay dynamics are expected to play a major role in the efficiency of light-driven chemical reactions, but it is unclear to what extent these factors contribute to the photo(electro)catalytic properties of ML-MoS. Here, we report spatially resolved PL, Raman, and photo-electrochemical current measurements of 5-10 μm-wide ML-MoS triangles deposited on pairs of indium-doped tin oxide (ITO) electrodes that are separated by a narrow insulating quartz channel [i.e., an ITO interdigitated array (IDA) electrode]. Optical microscopy images and atomic force microscopy measurements revealed that the ML-MoS triangles lie conformally on the quartz and ITO substrates. The PL spectrum of MoS shifts and decreases in intensity in the ITO region, which can be attributed to differences in nonradiative and radiative exciton decay channels. Raman spectra showed no significant peak shifts on the two substrates that would have indicated a substrate-induced doping effect. We spatially resolved the photo-electrochemical current because of hole-induced iodide oxidation and observed that ML-MoS produces lower photocurrents in the quartz region than in the ITO region. The correlated PL, Raman, and photocurrent mapping data show that the MoS/quartz interface diminishes fast nonradiative exciton decay pathways but the photocurrent response in the quartz region is likely limited by inefficient in-plane carrier transport to the ITO electrode because of carrier recombination with S vacancies in MoS or charged impurities in the quartz substrate. Nonetheless, the experimental methodology presented herein provides a framework to evaluate substrate engineering strategies to tune the (photo)electrocatalytic properties of two-dimensional materials.
在场效应晶体管和光电探测器中,衬底会影响单层(ML)MoS₂ 的电学和光学性质。光致发光(PL)和拉曼光谱测量表明,导电衬底会改变掺杂浓度并影响 ML-MoS₂ 中的激子衰变通道。掺杂和激子衰变动力学预计在光驱动化学反应的效率中起主要作用,但尚不清楚这些因素在多大程度上有助于 ML-MoS₂ 的光(电)催化性能。在此,我们报告了沉积在由狭窄绝缘石英通道隔开的一对铟掺杂氧化锡(ITO)电极上的 5-10μm 宽的 ML-MoS₂ 三角形的空间分辨 PL、拉曼和光电化学电流测量结果[即 ITO 叉指阵列(IDA)电极]。光学显微镜图像和原子力显微镜测量表明,ML-MoS₂ 三角形共形地位于石英和 ITO 衬底上。MoS₂ 的 PL 光谱在 ITO 区域发生位移且强度降低,这可归因于非辐射和辐射激子衰变通道的差异。拉曼光谱显示在两个衬底上没有明显的峰位移,这表明没有衬底诱导的掺杂效应。我们对空穴诱导的碘化物氧化产生的光电化学电流进行了空间分辨,观察到 ML-MoS₂ 在石英区域产生的光电流低于 ITO 区域。相关的 PL、拉曼和光电流映射数据表明,MoS₂/石英界面减少了快速非辐射激子衰变途径,但石英区域的光电流响应可能受到平面内载流子向 ITO 电极传输效率低下的限制,这是由于载流子与 MoS₂ 中的 S 空位或石英衬底中的带电杂质复合所致。尽管如此,本文提出的实验方法提供了一个框架,用于评估调整二维材料光(电)催化性能的衬底工程策略。