Strange Lyndi E, Yadav Jeetika, Garg Sourav, Shinde Pravin S, Hill Joshua W, Hill Caleb M, Kung Patrick, Pan Shanlin
Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States.
J Phys Chem Lett. 2020 May 7;11(9):3488-3494. doi: 10.1021/acs.jpclett.0c00769. Epub 2020 Apr 21.
Control over photophysical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) is the key to advance their applications in next-generation optoelectronics. Although chemical doping and surface modification with plasmonic metals have been reported to tune the photophysical and catalytic properties of 2D TMDs, there have been few reports of tuning optical properties using dynamic electrochemical control of electrode potential. Herein, we report (1) the photoluminescence (PL) enhancement and red-shift in the PL spectrum of 2D MoS, synthesized by chemical vapor deposition and subsequent transfer onto an indium tin oxide electrode, upon electrochemical anodization and (2) spatial heterogeneities in its photoelectrochemical (PEC) activities. Spectroelectrochemistry shows that positive electrochemical bias causes an initial ten-fold increase in the PL intensity followed by a quick decrease in the enhancement. The PL enhancement and spectrum red-shift are associated with the decrease in nonradiative decay rates of excitons formed upon electrochemical anodization of 2D MoS. Additionally, scanning electrochemical cell microscopy (SECCM) study shows that the 2D MoS crystal is spatially sensitive to PEC oxidation at positive potentials. SECCM also shows a photocurrent increase caused by spatially heterogeneous edge-type defect sites of the crystal.
控制二维(2D)过渡金属二硫属化物(TMDs)的光物理和化学性质是推动其在下一代光电子学中应用的关键。尽管已报道通过化学掺杂和用等离子体金属进行表面改性来调节二维TMDs的光物理和催化性质,但利用电极电位的动态电化学控制来调节光学性质的报道却很少。在此,我们报道:(1)通过化学气相沉积合成并随后转移到氧化铟锡电极上的二维MoS₂,在电化学阳极氧化时其光致发光(PL)增强且PL光谱发生红移;(2)其光电化学(PEC)活性存在空间异质性。光谱电化学表明,正电化学偏压会使PL强度最初增加十倍,随后增强迅速下降。PL增强和光谱红移与二维MoS₂电化学阳极氧化形成的激子非辐射衰减率的降低有关。此外,扫描电化学池显微镜(SECCM)研究表明,二维MoS₂晶体在正电位下对PEC氧化在空间上敏感。SECCM还显示出由晶体的空间异质边缘型缺陷位点引起的光电流增加。