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以二硫化锡为中心的氮化硼和石墨烯范德华三层结构中的相互作用:镜面对称性对电子相互作用的影响。

Interactions in stanene centred van der Waals trilayers structures of boron-nitride and graphene: effect of mirror symmetry on electronic interactions.

作者信息

Yun Frank F, Cortie D L, Wang X L

机构信息

Spintronic and Electronic Materials Group, Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, North Wollongong, New South Wales 2500, Australia. Australian Research Council Centre of Excellence in Future Low Energy Electronics Technologies, University of Wollongong, North Wollongong, New South Wales 2500, Australia.

出版信息

J Phys Condens Matter. 2020 Jun 17;32(26):265001. doi: 10.1088/1361-648X/ab7d62.

Abstract

Dispersion-corrected density functional theory was used to investigate structures consisting of a stanene layer sandwiched between atomically-thin boron nitride and graphene. The parameters controlling the mirror symmetry, lattice rotation and stacking sequences were varied systematically to generate fifteen candidate trilayers. Two types of structural buckling occur in the heterostructures depending on whether the lattice vectors are co-aligned or non-collinear. The configurations with the honeycomb lattices rotated by π/6 with respect to the stanene generally have lower binding energy. In the majority of the trilayers, the electronic structures deviate strongly from the band structures of the isolated components. The boron nitride/stanene/boron nitride structure is identified as a special case where stanene has an electronic structure that is not perturbed by interlayer interactions and resembles the ideal monolayer form. For the other candidate structures, however, interlayer interactions drive significant modifications in the electronic structure thus indicating emergent features that go beyond the pure van der Waals description.

摘要

采用色散校正密度泛函理论研究了由夹在原子级薄的氮化硼和石墨烯之间的锡烯层组成的结构。系统地改变控制镜面对称性、晶格旋转和堆叠顺序的参数,以生成15种候选三层结构。根据晶格向量是共线还是非共线,异质结构中会出现两种类型的结构屈曲。蜂窝晶格相对于锡烯旋转π/6的构型通常具有较低的结合能。在大多数三层结构中,电子结构与孤立组分的能带结构有很大偏差。氮化硼/锡烯/氮化硼结构被认为是一种特殊情况,其中锡烯的电子结构不受层间相互作用的干扰,类似于理想的单层形式。然而,对于其他候选结构,层间相互作用会导致电子结构发生显著变化,从而表明出现了超越纯范德华描述的新特性。

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