Sano Chikako, Ataka Manabu, Hashiguchi Gen, Toshiyoshi Hiroshi
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan.
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan.
Micromachines (Basel). 2020 Mar 4;11(3):267. doi: 10.3390/mi11030267.
Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system.
尽管在各种应用中开发了节能设备，但微机电系统（MEMS）静电致动器仍需要高电压才能产生大位移。在这方面，具有准永久电荷的驻极体允许将大的固定电压直接集成在电极结构内，以减少或消除对直流偏置电子设备的需求。为了进行验证，由于硅微加工与钾离子驻极体制备方法的高度兼容性，在面向2μm间隙的绝缘体上硅（SOI）结构的内表面制备了一个偏置驻极体层。一个具有平面外运动膜的驻极体增强致动器在仅交流输入电压的情况下，最大声压级（SPL）达到了50dB，这表明其在诸如微型扬声器等声换能器应用方面具有潜力。这种带有驻极体偏置的设备仅需要输入信号电压，从而有助于降低设备系统的整体功耗。
