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氮化铝面外压电微机电系统致动器

Aluminum Nitride Out-of-Plane Piezoelectric MEMS Actuators.

作者信息

Rabih Almur A S, Kazemi Mohammad, Ménard Michaël, Nabki Frederic

机构信息

Department of Electrical Engineering, École de Technologie Supérieure, Montréal, QC H3C 1K3, Canada.

出版信息

Micromachines (Basel). 2023 Mar 22;14(3):700. doi: 10.3390/mi14030700.

DOI:10.3390/mi14030700
PMID:36985106
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10059770/
Abstract

Integrating microelectromechanical systems (MEMS) actuators with low-loss suspended silicon nitride waveguides enables the precise alignment of these waveguides to other photonic integrated circuits (PICs). This requires both in-plane and out-of-plane actuators to ensure high-precision optical alignment. However, most current out-of-plane electrostatic actuators are bulky, while electrothermal actuators consume high power. Thus, piezoelectric actuators, thanks to their moderate actuation voltages and low power consumption, could be used as alternatives. Furthermore, piezoelectric actuators can provide displacements in two opposite directions. This study presents a novel aluminum nitride-based out-of-plane piezoelectric MEMS actuator equipped with a capacitive sensing mechanism to track its displacement. This actuator could be integrated within PICs to align different chips. Prototypes of the device were tested over the range of ±60 V, where they provided upward and downward displacements, and achieved a total average out-of-plane displacement of 1.30 ± 0.04 μm. Capacitance measurement showed a linear relation with the displacement, where at -60 V, the average change in capacitance was found to be -13.10 ± 0.89 fF, whereas at 60 V the change was 11.09 ± 0.73 fF. This study also investigates the effect of the residual stress caused by the top metal electrode, on the linearity of the displacement-voltage relation. The simulation predicts that the prototype could be modified to accommodate waveguide routing above it without affecting its performance, and it could also incorporate in-plane lateral actuators.

摘要

将微机电系统(MEMS)致动器与低损耗悬浮氮化硅波导集成在一起,能够使这些波导与其他光子集成电路(PIC)实现精确对准。这需要平面内和平面外致动器来确保高精度的光学对准。然而,目前大多数平面外静电致动器体积庞大,而电热致动器功耗较高。因此,压电致动器因其适中的驱动电压和低功耗,可以作为替代方案。此外,压电致动器可以在两个相反方向上提供位移。本研究提出了一种新型的基于氮化铝的平面外压电MEMS致动器,该致动器配备了电容传感机制来跟踪其位移。这种致动器可以集成在光子集成电路中,用于对准不同的芯片。该器件的原型在±60 V的电压范围内进行了测试,在该范围内它们提供了向上和向下的位移,并且实现了平面外总平均位移为1.30±0.04μm。电容测量显示与位移呈线性关系,在-60 V时,发现电容的平均变化为-13.10±0.89 fF,而在60 V时变化为11.09±0.73 fF。本研究还研究了顶部金属电极引起的残余应力对位移-电压关系线性度的影响。模拟预测,该原型可以进行修改,以适应其上方的波导布线而不影响其性能,并且它还可以集成平面内横向致动器。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/21a96a11a256/micromachines-14-00700-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/8237ce9a0dbb/micromachines-14-00700-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/ff73f3a357d6/micromachines-14-00700-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/e346bd73d4ef/micromachines-14-00700-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/caa160f92630/micromachines-14-00700-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/345d9afdb2f6/micromachines-14-00700-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/da3b8c8207c9/micromachines-14-00700-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/7df3c6d5890e/micromachines-14-00700-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/822a0ea864aa/micromachines-14-00700-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/cc3c996ef8fd/micromachines-14-00700-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/85fc288904ac/micromachines-14-00700-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/3de9512ec0a3/micromachines-14-00700-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/21a96a11a256/micromachines-14-00700-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/8237ce9a0dbb/micromachines-14-00700-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/ff73f3a357d6/micromachines-14-00700-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/e346bd73d4ef/micromachines-14-00700-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/caa160f92630/micromachines-14-00700-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/345d9afdb2f6/micromachines-14-00700-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/da3b8c8207c9/micromachines-14-00700-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/7df3c6d5890e/micromachines-14-00700-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/822a0ea864aa/micromachines-14-00700-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/cc3c996ef8fd/micromachines-14-00700-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/85fc288904ac/micromachines-14-00700-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/3de9512ec0a3/micromachines-14-00700-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fde3/10059770/21a96a11a256/micromachines-14-00700-g012.jpg

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