Fina Ignasi, Dix Nico, Menéndez Enric, Crespi Anna, Foerster Michael, Aballe Lucia, Sánchez Florencio, Fontcuberta Josep
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, E-08193 Bellaterra, Catalonia, Spain.
Departament de Física, Universitat Autònoma de Barcelona, Cerdanyola del Vallès, E-08193, Spain.
ACS Appl Mater Interfaces. 2020 Apr 1;12(13):15389-15395. doi: 10.1021/acsami.0c00704. Epub 2020 Mar 19.
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large-scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 °C. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05%) is used to illustrate data writing/reading capability.
铁铑（FeRh）中高于室温发生的反铁磁到铁磁转变因其在自旋电子学中的应用前景而备受关注，有望实现强大且不可追踪的数据存储。在此，我们表明铁铑薄膜可以生长在柔性金属基底（带状）上，该基底涂覆有织构化的岩盐氧化镁（MgO）层，适用于大规模应用。铁铑带在约90°C时显示出尖锐的反铁磁到铁磁转变。通过弯曲（半径为300毫米）可保持其磁性能，并且利用其各向异性磁电阻（高达0.05%）来说明数据写入/读取能力。
