Quintana Alberto, Zarco Carlos, Dix Nico, Sánchez Florencio, Fina Ignasi, Fontcuberta Josep
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Catalonia, Spain.
ACS Appl Electron Mater. 2023 Aug 31;5(9):5043-5049. doi: 10.1021/acsaelm.3c00789. eCollection 2023 Sep 26.
FeRh shows an antiferromagnetic to ferromagnetic phase transition above room temperature, which permits its use as an antiferromagnetic memory element. However, its antiferromagnetic order is sensitive to small variations in crystallinity and composition, challenging its integration into flexible devices. Here, we show that flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica. The magnetic and transport data indicate that the FeRh films display a sharp antiferromagnetic to ferromagnetic phase transition. Magnetotransport data allow for the observation of two distinguishable resistance states, which are written after a field-cooling procedure. It is shown that the memory states are robust under the application of magnetic fields of up to 10 kOe.
铁铑（FeRh）在室温以上表现出从反铁磁到铁磁的相变，这使其能够用作反铁磁存储元件。然而，其反铁磁序对结晶度和成分的微小变化很敏感，这对将其集成到柔性器件中构成了挑战。在此，我们表明，通过使用云母作为衬底，随后对云母进行机械剥离，可以合成具有高结晶质量的柔性FeRh薄膜。磁性和输运数据表明，FeRh薄膜表现出从反铁磁到铁磁的急剧相变。磁输运数据允许观察到两种可区分的电阻状态，这两种状态是在场冷过程后写入的。结果表明，在高达10 kOe的磁场作用下，存储状态是稳定的。
