He Tingchao, Liu Huan, Li Junzi, Xiao Shuyu, Hu Wenbo, Qiu Xin, Lin Xiaodong, Gao Yang
Opt Lett. 2020 Mar 15;45(6):1350-1353. doi: 10.1364/OL.384876.
Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (NIR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of $\sim{220};{\rm ps}$∼220ps for Cu:InP NCs and $\sim{183};{\rm ps}$∼183ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching $\sim{10162}$∼10162 GM at 1030 nm and $\sim{1.06} \times {{10}^{ - 77}};{{\rm cm}^6},{{\rm s}^2},{{\rm photon}^{ - 2}}$∼1.06×10cmsphoton at 1600 nm, compared with Cu:InP NCs.
制备并表征了具有近红外-I(NIR-I)发射的铜掺杂磷化铟(Cu:InP)和磷化铟/硒化锌纳米晶体(NCs)。飞秒瞬态吸收光谱表明,在Cu:InP核上外延生长硒化锌扩散势垒可以增强其激子-掺杂剂耦合强度,Cu:InP纳米晶体的能量转移时间约为220 ps,Cu:InP/ZnSe纳米晶体的能量转移时间约为183 ps。重要的是,与Cu:InP纳米晶体相比,Cu:InP/ZnSe纳米晶体表现出大得多的双光子和三光子吸收截面,在1030 nm处达到约10162 GM,在1600 nm处达到约1.06×10⁻⁷⁷ cm⁶ s² photon⁻²。