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在晶格失配衬底上生长InAs异质外延层时的应变弛豫

Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates.

作者信息

Ohtake Akihiro, Mano Takaaki, Sakuma Yoshiki

机构信息

National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan.

出版信息

Sci Rep. 2020 Mar 12;10(1):4606. doi: 10.1038/s41598-020-61527-9.

DOI:10.1038/s41598-020-61527-9
PMID:32165693
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7067763/
Abstract

Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.

摘要

已对InAs异质外延中的应变弛豫过程进行了研究。当InAs在GaAs(111)A、Si(111)和GaSb(111)A的晶格失配衬底上以逐层模式生长时，应变弛豫过程强烈依赖于晶格失配。InAs薄膜中穿透位错的密度随晶格失配而增加。我们发现，X射线衍射中的峰宽对缺陷密度不敏感，但关键取决于InAs薄膜中的残余晶格应变。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/94fa5d08f01d/41598_2020_61527_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/115b0b3f495e/41598_2020_61527_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/7793af9b66dc/41598_2020_61527_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/c902eaff4f9d/41598_2020_61527_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/94fa5d08f01d/41598_2020_61527_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/115b0b3f495e/41598_2020_61527_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/7793af9b66dc/41598_2020_61527_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/c902eaff4f9d/41598_2020_61527_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/08c4/7067763/94fa5d08f01d/41598_2020_61527_Fig4_HTML.jpg

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