Ohtake A, Ozeki M, Nakamura J
Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan and and Angstrom Technology Partnership (ATP), Tsukuba 305-0046, Japan.
Phys Rev Lett. 2000 May 15;84(20):4665-8. doi: 10.1103/PhysRevLett.84.4665.
We have studied strain-relaxation processes in InAs heteroepitaxy on GaAs(111)A using rocking-curve analysis of reflection high-energy electron diffraction. Strain relaxation in the direction parallel to the surface occurs at approximately 1.5 bilayers (BL) thickness. On the other hand, the lattice constant in the direction normal to the surface remains almost unchanged below approximately 3 BL thickness and is estimated to be approximately 3.3 A. This value, slightly larger than that of bulk GaAs (3.26 A), does not quite reach the value predicted by classical elastic theory, 3.64 A. The present result has been supported by the first-principles total-energy calculations.
我们利用反射高能电子衍射的摇摆曲线分析，研究了在GaAs(111)A上进行InAs异质外延生长时的应变弛豫过程。在平行于表面的方向上，应变弛豫大约在1.5个双层（BL）厚度时发生。另一方面，在垂直于表面的方向上，晶格常数在大约3个BL厚度以下几乎保持不变，估计约为3.3埃。这个值略大于体相GaAs的晶格常数（3.26埃），但并未完全达到经典弹性理论预测的值3.64埃。第一性原理总能计算支持了目前的结果。
