Gu Zhenkun, Zhou Zhonghao, Huang Zhandong, Wang Kang, Cai Zheren, Hu Xiaotian, Li Lihong, Li Mingzhu, Zhao Yong Sheng, Song Yanlin
Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China.
University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Adv Mater. 2020 Apr;32(17):e1908006. doi: 10.1002/adma.201908006. Epub 2020 Mar 12.
Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr ) microplate arrays with uniform morphology as well as controlled location and size is reported. By introducing perovskite seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of perovskite crystals is accurately controlled. It is further demonstrated that CsPbBr microplate arrays can be monolithically integrated on substrates for the fabrication of high-performance lasers and photodetectors. This strategy provides a facile approach to fabricate high-quality CsPbBr microplates with controllable size and location, which offers new opportunities for the scalable production of integrated optoelectronic devices.
无机钙钛矿单晶已成为用于光电器件的有前景的气相可加工结构。然而，由于材料晶格失配和不受控制的成核，气相方法一直局限于单晶的随机分布，这对于集成器件阵列来说难以实现。在此，报道了一种有效的策略，用于控制高质量溴化铯铅钙钛矿（CsPbBr）微板阵列的气相生长，该阵列具有均匀的形态以及可控的位置和尺寸。通过在衬底上引入钙钛矿晶种，克服了棘手的晶格失配和随机成核障碍，并精确控制了钙钛矿晶体的外延生长。进一步证明，CsPbBr微板阵列可以单片集成在衬底上，用于制造高性能激光器和光电探测器。该策略提供了一种简便的方法来制造尺寸和位置可控的高质量CsPbBr微板，为集成光电器件的可扩展生产提供了新的机会。
