Jia Qiang, Zou Guisheng, Wang Wengan, Ren Hui, Zhang Hongqiang, Deng Zhongyang, Feng Bin, Liu Lei
Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.
School of Mechanical Engineering and Automation, Beihang University, Beijing 100191, China.
ACS Appl Mater Interfaces. 2020 Apr 8;12(14):16743-16752. doi: 10.1021/acsami.9b20731. Epub 2020 Mar 24.
Ag-Cu bimetallic nanoparticles, combining the advantages of both Ag and Cu, are a promising material for power electronic packaging. In this work, a supersaturated Ag-7.3 wt % Cu alloy nanoparticle film was developed by using pulsed laser deposition. Unlike Cu nanoparticles, the supersaturated Ag-Cu alloy nanoparticles can conduct bonding in air without the assistance of a reduction agent. The shear strength was >20 MPa when the bonding temperature reached 300 °C, which was above the die shear standard (MIL-STD-883 K, 7.8 MPa) and compatible with the typical die attach process. The Cu separating behavior was accompanied by the bonding process at 250-400 °C, which was discussed systematically. Neck formation was delayed to about 250 °C because of the hindering effect of the thin oxide shell of the Ag-Cu alloy. The necking networks provide volume diffusion paths despite the growth of surface oxide, resulting in compact densification. The bondline under the SiC die consisted of a porous Ag-Cu alloy matrix with a dispersed secondary phase of CuO/CuO, which is supposed to have improved electrochemical migration resistance.
银铜双金属纳米颗粒结合了银和铜的优点,是一种很有前途的功率电子封装材料。在这项工作中,通过脉冲激光沉积制备了一种过饱和的Ag-7.3 wt% Cu合金纳米颗粒薄膜。与铜纳米颗粒不同,过饱和的银铜合金纳米颗粒可以在空气中进行键合,无需还原剂的辅助。当键合温度达到300°C时,剪切强度>20 MPa,高于芯片剪切标准(MIL-STD-883 K,7.8 MPa),并且与典型的芯片粘贴工艺兼容。在250-400°C的键合过程中伴随着铜的分离行为,并对此进行了系统讨论。由于银铜合金薄氧化壳的阻碍作用,颈部形成延迟到约250°C。尽管表面氧化物生长,但颈部网络提供了体积扩散路径,从而实现致密化。碳化硅芯片下方的键合线由多孔的银铜合金基体和分散的CuO/CuO第二相组成,这被认为提高了抗电化学迁移能力。