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碳化脱氢抗坏血酸:用于石墨烯缺陷的靶向修复及小尺寸石墨烯片层的桥连

Carbonized Dehydroascorbic Acid: Aim for Targeted Repair of Graphene Defects and Bridge Connection of Graphene Sheets with Small Size.

作者信息

Li Jing, Lai Jinfeng, Liu Jialiang, Lei Rubai, Chen Yuxun

机构信息

School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510641, China.

South China University of Technology-Zhuhai Institute of Modern Industrial Innovation, Zhuhai 519000, China.

出版信息

Nanomaterials (Basel). 2020 Mar 16;10(3):531. doi: 10.3390/nano10030531.

DOI:10.3390/nano10030531
PMID:32187988
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7153701/
Abstract

The thermal dissipation issue of electronics devices becomes increasingly prominent as they evolve to smaller sizes and more complicated structures. Therefore, the development of materials with excellent heat conduction properties and light weight turns out to be an urgent demand to solve the heat transfer problem of electronics devices with high performance. For this purpose, we put forward an innovative strategy that carbonized dehydroascorbic acid (CDA) be applied to graphene layers for the targeted repair of defects among them and bridge connection of the layers to produce graphene heat conduction materials with excellent properties. Firstly, hydrogen bonds formed from dehydroascorbic acid (DHAA, products of the oxidation of vitamin C) and each of ketone, carboxyl, and oxhydryl groups on graphene layers were absorbed at targeted locations where oxidation graphene produces defects, then targeted repair was conducted for those defects to be filled and for the graphene layers of a small size to grow into large sheet materials with improved continuity by CDA generated in thermally pressing reduction reaction at 800 °C. In our investigation, the planar thermal conductivity of rGO/VC membrane reached 1031.9 ± 10.2 WmK, while the added mass content of vitamin C (VC) was 15%. Being a reference, the planar thermal conductivity of primitive graphene membrane was only 610.7 ± 11.7 WmK.

摘要

随着电子设备向更小尺寸和更复杂结构发展,其热耗散问题日益突出。因此,开发具有优异导热性能且重量轻的材料成为解决高性能电子设备传热问题的迫切需求。为此,我们提出了一种创新策略,即将碳化脱氢抗坏血酸(CDA)应用于石墨烯层,以有针对性地修复其中的缺陷并实现层间桥接,从而制备出具有优异性能的石墨烯导热材料。首先,脱氢抗坏血酸(DHAA,维生素C的氧化产物)与石墨烯层上的酮基、羧基和羟基分别形成的氢键被吸附在氧化石墨烯产生缺陷的目标位置,然后对这些缺陷进行有针对性的修复,使缺陷得到填充,并且通过800℃热压还原反应生成的CDA,让小尺寸的石墨烯层生长成连续性更好的大片状材料。在我们的研究中,rGO/VC膜的平面热导率达到1031.9±10.2WmK,而维生素C(VC)的添加质量含量为15%。作为参考,原始石墨烯膜的平面热导率仅为6—10.7±11.7WmK。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/82461623a9e9/nanomaterials-10-00531-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/de751a65c07e/nanomaterials-10-00531-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/c0ac7718a204/nanomaterials-10-00531-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/6b94886a2a7d/nanomaterials-10-00531-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/38dc770d653b/nanomaterials-10-00531-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/82461623a9e9/nanomaterials-10-00531-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/de751a65c07e/nanomaterials-10-00531-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/c0ac7718a204/nanomaterials-10-00531-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/6b94886a2a7d/nanomaterials-10-00531-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/38dc770d653b/nanomaterials-10-00531-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de99/7153701/82461623a9e9/nanomaterials-10-00531-g005.jpg

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