Ma Chao, Luo Zhen, Huang Weichuan, Zhao Letian, Chen Qiaoling, Lin Yue, Liu Xiang, Chen Zhiwei, Liu Chuanchuan, Sun Haoyang, Jin Xi, Yin Yuewei, Li Xiaoguang
Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and CAS key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, China.
Key Laboratory of Materials Physics, Institute of Solid State Physics, CAS, Hefei, China.
Nat Commun. 2020 Mar 18;11(1):1439. doi: 10.1038/s41467-020-15249-1.
Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO/Nb:SrTiO ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 10 A cm. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.
在大数据时代，人们迫切需要具有超快速度、低功耗和高密度的下一代非易失性存储器。在此，我们报道了一种基于Ag/BaTiO/Nb:SrTiO铁电隧道结（FTJ）的高性能忆阻器，在所报道的FTJ中，其具有最快的操作速度（600 ps）和每个单元最高的状态数（32个状态或5比特）。亚纳秒级的电阻切换可维持到358 K，写入电流密度低至4×10 A/cm。通过超快操作还获得了作为固态突触器件的依赖于脉冲时间的可塑性功能。此外，结果表明，具有较高载流子浓度的Nb:SrTiO电极和具有较低功函数的金属电极倾向于提高操作速度。这些结果可能为克服不同层次存储层级之间的存储性能差距以及开发超快神经形态计算系统指明方向。
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