School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore; Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing, 100084, People's Republic of China.
Adv Mater. 2014 Nov 12;26(42):7185-9. doi: 10.1002/adma.201402527. Epub 2014 Sep 8.
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
在硅（001）上外延生长功能钙钛矿和 3.2nm 厚的 BaTiO3 阻挡层的铁电性得到了证明。测量得到的隧穿电阻在极化反转诱导下的变化达到了两个数量级。研究结果表明，在硅平台上的非易失性存储单元中，铁电隧道结作为二进制数据存储介质具有集成的可能性。
