Jia Caihong, Li Jiachen, Yang Guang, Chen Yonghai, Zhang Weifeng
Henan Key Laboratory of Photovoltaic Materials, Laboratory of Low-Dimensional Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.
Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
Nanoscale Res Lett. 2018 Apr 13;13(1):102. doi: 10.1186/s11671-018-2513-6.
Asymmetric resistive switching processes were observed in BaTiO/Nb:SrTiO epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10 ns under - 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO/Nb:SrTiO heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
在BaTiO/Nb:SrTiO外延异质结中观察到了非对称电阻开关过程。在+8V偏压下，从高电阻态到低电阻态的SET开关时间在10纳秒范围内，而在-8V偏压下，从低电阻态到高电阻态的RESET开关时间在10纳秒范围内。提出了由BaTiO/Nb:SrTiO异质界面处的电子和氧空位控制的铁电极化屏蔽来解释这种开关时间差异。这种具有快速SET和缓慢RESET转变的开关可能在某些特殊领域具有潜在应用。
