Tian Mengchuan, Hu Qianlan, Gu Chengru, Xiong Xiong, Zhang Zhenfeng, Li Xuefei, Wu Yanqing
Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing 100871, China.
ACS Appl Mater Interfaces. 2020 Apr 15;12(15):17686-17690. doi: 10.1021/acsami.9b21070. Epub 2020 Apr 2.
Low-frequency noise is a key performance-limiting factor in almost all electronic systems. Thanks to its excellent characteristics such as exceptionally high electron mobility, graphene has high potential for future low-noise electronic applications. Here, we present an experimental analysis of low-frequency noise in dual-gate graphene transistors based on chemical vapor-deposited Bernal-stacked bilayer graphene. The fabricated dual-gate bilayer graphene transistors adopt atomic layer-deposited AlO and HfSiO as top-gate and back-gate dielectric, respectively. Our results reveal an obvious M-shape gate-dependent noise behavior which can be well described by a quantitative charge-noise model. The minimal area normalized noise spectral density at 10 Hz reaches as low as about 3 × 10 μm·Hz at room temperature, much lower than the best results reported previously for graphene devices. In addition, the observed noise level further decreases by more than 10 times at temperature of 20 K. Meanwhile, the noise spectral density amplitude can be tuned by more than 2 orders of magnitude at 20 K by dual-gate voltages.
低频噪声是几乎所有电子系统中关键的性能限制因素。由于具有诸如极高的电子迁移率等优异特性，石墨烯在未来低噪声电子应用方面具有很大潜力。在此，我们展示了基于化学气相沉积的伯纳尔堆叠双层石墨烯的双栅极石墨烯晶体管中低频噪声的实验分析。所制备的双栅极双层石墨烯晶体管分别采用原子层沉积的AlO和HfSiO作为顶栅和背栅电介质。我们的结果揭示了一种明显的与栅极相关的M形噪声行为，这可以通过定量电荷噪声模型很好地描述。在室温下，10 Hz时的最小面积归一化噪声谱密度低至约3×10μm·Hz，远低于先前报道的石墨烯器件的最佳结果。此外，在20 K温度下，观察到的噪声水平进一步降低超过10倍。同时，在20 K时，通过双栅极电压可将噪声谱密度幅度调节超过2个数量级。
