基于化学气相沉积生长的双层石墨烯构建的高性能霍尔传感器。

High Performance Hall Sensors Built on Chemical Vapor Deposition-Grown Bilayer Graphene.

作者信息

Dai Tongyu, Xu Hua, Chen Shanshan, Zhang Zhiyong

机构信息

Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China.

Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China.

出版信息

ACS Omega. 2022 Jul 12;7(29):25644-25649. doi: 10.1021/acsomega.2c02864. eCollection 2022 Jul 26.

DOI:10.1021/acsomega.2c02864

PMID:35910148

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9330160/

Abstract

Graphene has been considered as an excellent channel material for constructing magnetic sensors or Hall elements with high sensitivity and linearity. Compared to intensively reported graphene Hall elements (GHEs) fabricated on monolayer graphene, the exploration on bilayer graphene-based Hall elements is very rare. Here, we first investigate the performance and potential of Hall elements built on chemical vapor deposition-grown bilayer graphene. Without applying any gate voltage, the bilayer GHEs exhibit a typical voltage sensitivity of 119 mV/VT and current sensitivity of 397 V/AT, which are higher than those in the monolayer GHEs, indicating the better performance in practical applications. Moreover, the bilayer GHEs present obviously lower noise and then the minimum detection magnetic field compared to the monolayer ones. Hall elements built on bilayer graphene show certain unique advantages and can be used as an important supplement to mainstreaming monolayer GHEs.

摘要

石墨烯被认为是构建具有高灵敏度和线性度的磁传感器或霍尔元件的优良沟道材料。与大量报道的基于单层石墨烯制备的石墨烯霍尔元件（GHEs）相比，对基于双层石墨烯的霍尔元件的探索非常罕见。在此，我们首次研究了基于化学气相沉积生长的双层石墨烯构建的霍尔元件的性能和潜力。在不施加任何栅极电压的情况下，双层GHEs表现出典型的电压灵敏度为119 mV/VT和电流灵敏度为397 V/AT，高于单层GHEs，表明其在实际应用中具有更好的性能。此外，与单层GHEs相比，双层GHEs的噪声明显更低，进而具有最小检测磁场。基于双层石墨烯构建的霍尔元件显示出一定的独特优势，可作为主流单层GHEs的重要补充。