Cezairliyan A, McClure J L
Institute for Materials Research, National Bureau of Standards, Washington, D.C. 20234.
J Res Natl Bur Stand A Phys Chem. 1976 Jul-Aug;80A(4):659-662. doi: 10.6028/jres.080A.065. Epub 1976 Aug 1.
A subsecond duration pulse heating method is used to measure the melting point and radiance temperature (at 653 nm) at the melting point of hafnium containing 3.12 weight percent zirconium. The results yield a value of 2471 K for the melting point on the International Practical Temperature Scale of 1968. The radiance temperature (at 653 nm) of this material at its melting point is 2236 K, and the corresponding normal spectral emittance is 0.39. Estimated inaccuracies are: 10 K in the melting point and in the radiance temperature, and 5 percent in the normal spectral emittance.
采用亚秒级持续时间的脉冲加热方法来测量含3.12重量百分比锆的铪的熔点以及熔点处的辐射温度(653纳米波长处)。结果得出在1968年国际实用温标下该材料熔点为2471K。该材料在熔点处的辐射温度(653纳米波长处)为2236K,相应的正常光谱发射率为0.39。估计的误差为:熔点和辐射温度的误差为10K,正常光谱发射率的误差为5%。