Cezairliyan A, McClure J L, Beckett C W
Institute for Materials Research, National Bureau of Standards, Washington, D.C. 20234.
J Res Natl Bur Stand A Phys Chem. 1971 Jan-Feb;75A(1):1-13. doi: 10.6028/jres.075A.001.
Measurements of heat capacity, electrical resistivity, hemispherical total and normal spectral emittances of tantalum above 1900 K by a pulse heating technique are described. Duration of an individual experiment, in which the specimen is heated from room temperature to near its melting point, is less than one second. Temperature measurements are made with a photoelectric pyrometer. Experimental quantities are recorded with a digital data acquisition system. Time resolution of the entire system is 0.4 ms. Results on the above properties of tantalum in the range 1900 to 3200 K are reported and are compared with those in the literature. Estimated inaccuracy of measured properties in the above temperature range is 2 to 3 percent for heat capacity, 0.5 percent for electrical resistivity, 3 percent for hemispherical total emittance, and 2 percent for normal spectral emittance.
描述了通过脉冲加热技术对1900 K以上钽的热容、电阻率、半球全发射率和法线光谱发射率的测量。单个实验的持续时间，即试样从室温加热到接近熔点的时间，小于1秒。用光电高温计进行温度测量。实验数据用数字数据采集系统记录。整个系统的时间分辨率为0.4毫秒。报告了钽在1900至3200 K范围内上述性能的结果，并与文献中的结果进行了比较。在上述温度范围内，测量性能的估计误差为：热容2%至3%，电阻率0.5%，半球全发射率3%，法线光谱发射率2%。
