某些难熔合金的熔点、（熔点时的）正常光谱发射率及（接近熔点时的）电阻率的测量
Measurement of Melting Point, Normal Spectral Emittance (at Melting Point) and Electrical Resistivity (Near Melting Point) of Some Refractory Alloys.
作者信息
Cezairliyan Ared
机构信息
Institute for Materials Research, National Bureau of Standards, Washington, D.C. 20234.
出版信息
J Res Natl Bur Stand A Phys Chem. 1974 Jan-Feb;78A(1):5-8. doi: 10.6028/jres.078A.002.
A subsecond duration pulse heating method is used to measure the melting point, normal spectral emittance (at the melting point, corresponding to 650 nm). and electrical resistivity (near the melting point) of the following refractory alloys: 90 Ta-10 W, 99 Nb-1 Zr, and 80 Nb-10 Ta-10 W (numbers indicate nominal composition in percentage by weight). The melting point and the normal spectral emittance are: 3286 ± 15 K and 0.396 for 90 Ta-10 W, 2737 ± 10 K and 0.351 for 99 Nb-1 Zr, and 2814 ± 10 K and 0.333 for 80 Nb-10 Ta-10 W. The inaccuracy of the normal spectral emittance and electrical resistivity results is estimated to be 3 percent and 0.5 percent, respectively.
采用亚秒级持续时间的脉冲加热方法来测量以下难熔合金的熔点、正常光谱发射率（在熔点时，对应于650纳米）和电阻率（接近熔点）：90Ta-10W、99Nb-1Zr和80Nb-10Ta-10W（数字表示按重量百分比计的标称成分）。90Ta-10W的熔点和正常光谱发射率分别为3286±15K和0.396，99Nb-1Zr的为2737±10K和0.351，80Nb-10Ta-10W的为2814±10K和0.333。正常光谱发射率和电阻率结果的不准确度估计分别为3%和0.5%。
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