Wu Cheng-Yi, Yen Shiow-Kang
Department of Materials Engineering, National Chung Hsing University, Taichung 40227, Taiwan.
Materials (Basel). 2020 Mar 19;13(6):1384. doi: 10.3390/ma13061384.
Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.
六个尺寸从120纳米到360纳米不等的坡莫合金（Py）半环在五个角上串联连接。通过测量各向异性磁电阻（AMR）研究了磁化反转过程。AMR回线中的开关跳跃次数从零到五次不等，随纵向施加磁场而变化。这些离散跳跃是由畴壁（DW）在角上形核和脱钉引起的。外部磁场越大，磁电阻（MR）曲线中的跳跃次数越少。半环线图案中畴壁器件这种可重复且特殊的响应可能是一种新的有前途的磁电子器件之一。
