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封装元件对 MEMS 压力传感器热滞后的相对贡献。

Relative Contributions of Packaging Elements to the Thermal Hysteresis of a MEMS Pressure Sensor.

机构信息

Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, Leicestershire LE11 3TU, UK.

Druck Ltd. a division of Baker Hughes, 2 Fir Tree Lane, Groby, Leicestershire LE6 0FH, UK.

出版信息

Sensors (Basel). 2020 Mar 19;20(6):1727. doi: 10.3390/s20061727.

Abstract

Piezoresistive silicon pressure sensor samples were thermally cycled after being consecutively packaged to three different levels. These started with the absolute minimum to allow measurement of the output and with each subsequent level incorporating additional packaging elements within the build. Fitting the data to a mathematical function was necessary both to correct for any testing uncertainties within the pressure and temperature controllers, and to enable the identification and quantification of any hysteresis. Without being subjected to any previous thermal preconditioning, the sensors were characterized over three different temperature ranges and for multiple cycles, in order to determine the relative contributions of each packaging level toward thermal hysteresis. After reaching a stabilised hysteretic behaviour, 88.5% of the thermal hysteresis was determined to be related to the bond pads and wire bonds, which is likely to be due to the large thermal mismatch between the silicon and bond pad metallisation. The fluid-fill and isolation membrane contributed just 7.2% of the total hysteresis and the remaining 4.3% was related to the adhesive used for attachment of the sensing element to the housing. This novel sequential packaging evaluation methodology is independent of sensor design and is useful in identifying those packaging elements contributing the most to hysteresis.

摘要

压阻式硅压力传感器样品在连续封装到三个不同级别后进行热循环。这些级别从绝对最小值开始,以允许测量输出,并且每个后续级别在构建中都包含额外的封装元件。拟合数据到数学函数对于校正压力和温度控制器内的任何测试不确定性以及识别和量化任何滞后是必要的。在没有经历任何先前的热预处理的情况下,传感器在三个不同的温度范围内和多个循环中进行了特性化,以确定每个封装级别对热滞后的相对贡献。在达到稳定的滞后行为后,确定 88.5%的热滞后与键合盘和金线键合有关,这可能是由于硅和键合盘金属化之间存在很大的热失配。流体填充和隔离膜仅贡献了总滞后的 7.2%,其余 4.3%与用于将传感元件固定到外壳的粘合剂有关。这种新颖的顺序封装评估方法与传感器设计无关,可用于识别对滞后影响最大的封装元件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/94f9/7146208/0fb7ed4036f2/sensors-20-01727-g001.jpg

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