基于玻璃上硅真空封装的温度不敏感共振压力微传感器。

A Temperature-Insensitive Resonant Pressure Micro Sensor Based on Silicon-on-Glass Vacuum Packaging.

机构信息

State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China.

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Sensors (Basel). 2019 Sep 7;19(18):3866. doi: 10.3390/s19183866.

DOI:10.3390/s19183866

PMID:31500306

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6767015/

Abstract

This paper presents a temperature-insensitive resonant pressure sensor, which is mainly composed of a silicon-on-insulator (SOI) wafer for pressure measurements and a silicon-on-glass (SOG) cap for vacuum packaging. The variations of pressure under measurement bend the pressure sensitive diaphragm and regulate the intrinsic frequencies of the resonators in the device layer. While, variations of temperature cannot significantly change the intrinsic frequencies of the resonators, due to the SOG cap to offset generated thermal stress. Numerical simulations, based on finite element analysis, were conducted to calculate the residual thermal stress and optimize the sensing structures. Experimental results show that the Q-factors of the resonators are higher than 16,000, with a differential pressure sensitivity of 11.89 Hz/kPa, a nonlinearity of 0.01% F.S and a low fitting error of 0.01% F.S with the pressure varying from 100 kPa to 1000 kPa. In particular, a temperature sensitivity of ~1 Hz/°C was obtained in the range of -45 °C to 65 °C, which is one order of magnitude lower than the previously reported counterparts.

摘要

本文提出了一种温度不敏感的谐振压力传感器，主要由用于压力测量的绝缘体上硅（SOI）晶圆和用于真空封装的玻璃上硅（SOG）帽组成。测量压力下的变化会使压力敏感膜片弯曲，并调节器件层中谐振器的固有频率。而温度的变化由于 SOG 帽抵消了产生的热应力，因此不会显著改变谐振器的固有频率。基于有限元分析的数值模拟用于计算残余热应力并优化传感结构。实验结果表明，谐振器的 Q 因子高于 16000，差分压力灵敏度为 11.89 Hz/kPa，非线性度为 0.01% F.S，在压力从 100kPa 变化到 1000kPa 时，拟合误差低至 0.01% F.S。特别是，在-45°C 至 65°C 的范围内获得了约 1Hz/°C 的温度灵敏度，比以前报道的同类产品低一个数量级。