• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials.

作者信息

Mazza Michael F, Cabán-Acevedo Miguel, Wiensch Joshua D, Thompson Annelise C, Lewis Nathan S

机构信息

Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States.

出版信息

Nano Lett. 2020 Apr 8;20(4):2632-2638. doi: 10.1021/acs.nanolett.0c00179. Epub 2020 Mar 30.

DOI:10.1021/acs.nanolett.0c00179
PMID:32208708
Abstract

Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.

摘要

相似文献

1
Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials.
Nano Lett. 2020 Apr 8;20(4):2632-2638. doi: 10.1021/acs.nanolett.0c00179. Epub 2020 Mar 30.
2
Nucleation and growth mechanisms of AlO atomic layerdeposition on synthetic polycrystalline MoS.在合成多晶 MoS 上的 AlO 原子层沉积的成核和生长机制。
J Chem Phys. 2017 Feb 7;146(5):052810. doi: 10.1063/1.4967406.
3
Ripplocations in van der Waals layers.范德华层中的缠结。
Nano Lett. 2015 Feb 11;15(2):1302-8. doi: 10.1021/nl5045082. Epub 2015 Jan 14.
4
Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.过渡金属二卤化物及其以外的单层和少层纳米片的合成、性质和应用。
Acc Chem Res. 2015 Jan 20;48(1):56-64. doi: 10.1021/ar5002846. Epub 2014 Dec 9.
5
Probing Effective Out-of-Plane Piezoelectricity in van der Waals Layered Materials Induced by Flexoelectricity.探索由挠曲电引起的范德华层状材料中的有效面外压电性。
Small. 2019 Nov;15(46):e1903106. doi: 10.1002/smll.201903106. Epub 2019 Sep 24.
6
Metal configurations on 2D materials investigated via atomic resolution HAADF stem.通过原子分辨率高角度环形暗场扫描透射电子显微镜研究二维材料上的金属构型。
J Microsc. 2020 Sep;279(3):274-281. doi: 10.1111/jmi.12902. Epub 2020 May 30.
7
Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics.用于大面积二维电子器件的层状氮化硼的原子层沉积
ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36688-36694. doi: 10.1021/acsami.0c07548. Epub 2020 Jul 29.
8
Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope.利用明场光学显微镜观察范德华异质结构中的层间耦合。
Nano Lett. 2017 Sep 13;17(9):5342-5349. doi: 10.1021/acs.nanolett.7b01763. Epub 2017 Aug 3.
9
Layer-controlled precise fabrication of ultrathin MoS films by atomic layer deposition.原子层沉积法控制层状超薄 MoS 薄膜的精确制备。
Nanotechnology. 2017 May 12;28(19):195605. doi: 10.1088/1361-6528/aa6827. Epub 2017 Mar 21.
10
Morphology-controlled MoS by low-temperature atomic layer deposition.通过低温原子层沉积实现形貌可控的二硫化钼
Nanoscale. 2020 Oct 15;12(39):20404-20412. doi: 10.1039/d0nr03863f.

引用本文的文献

1
Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects.在石墨烯缺陷上进行金属氧化物的选择性区域无水原子层沉积。
ACS Mater Au. 2021 Nov 19;2(2):74-78. doi: 10.1021/acsmaterialsau.1c00049. eCollection 2022 Mar 9.