Mazza Michael F, Cabán-Acevedo Miguel, Fu Harold J, Meier Madeline C, Thompson Annelise C, Ifkovits Zachary P, Carim Azhar I, Lewis Nathan S
127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States.
Beckman Institute, California Institute of Technology, Pasadena, California 91125, United States.
ACS Mater Au. 2021 Nov 19;2(2):74-78. doi: 10.1021/acsmaterialsau.1c00049. eCollection 2022 Mar 9.
Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective water-based ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target defect regions on the graphene sheet, while keeping the basal plane intact, will provide a new mechanism to passivate graphene defects and modify the electronic and physical properties of graphene.
用金属氧化物钝化单层石墨烯上的缺陷区域仍然是石墨烯器件集成领域的一个活跃研究方向。为了有效钝化这些区域，开发了一种无水电原子层沉积（ALD）工艺，实现了在单层石墨烯的线缺陷上选择性区域ALD（sa-ALD）混合金属氧化物。各向异性沉积的薄膜针对的是在石墨烯层合成或转移过程中形成的高能缺陷位点。钝化层厚度超过10纳米，而在石墨烯基面的沉积极少。如X射线光电子能谱所示，混合金属氧化物薄膜的质量与使用非选择性水基ALD方法沉积的薄膜相当。开发针对石墨烯片上缺陷区域的sa-ALD技术，同时保持基面完好无损，将为钝化石墨烯缺陷以及改变石墨烯的电子和物理性质提供一种新机制。
