通过应用乙酰丙酮锆表面改性实现具有顶部发射结构和低效率滚降的明亮 CsPbI 钙钛矿量子点发光二极管。
Bright CsPbI Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification.
作者信息
Lu Min, Guo Jie, Sun Siqi, Lu Po, Wu Jinlei, Wang Yu, Kershaw Stephen V, Yu William W, Rogach Andrey L, Zhang Yu
机构信息
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR, China.
出版信息
Nano Lett. 2020 Apr 8;20(4):2829-2836. doi: 10.1021/acs.nanolett.0c00545. Epub 2020 Mar 30.
Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm) and a high luminance of 14 725 cd m, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.
乙酰丙酮锆用作合成CsPbI量子点（QDs）的共前驱体，可将其光致发光量子效率提高到90%以上。在具有高导热性的硅衬底上设计了顶部发光器件结构（以更好地消散在高电流密度下产生的焦耳热），利用底部和顶部电极之间强烈的微腔共振来提高光提取效率。由于这些改进，利用Zr修饰的CsPbI量子点且电致发光波长为686 nm的发光二极管（LED）在电流密度为108 mA/cm²时显示出13.7%的外量子效率（EQE），其具有低效率滚降特性（在500 mA/cm²的高电流密度下保持12.5%的EQE）和14725 cd/m²的高亮度，并且器件在高驱动电流密度下反复点亮（循环开关）的稳定性得到了极大增强。
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