Lai Kuo-Yang, Yang Shuan, Tsai Tung-Chang, Yao I-An, Yang Chiu-Lien, Chang Chih-Ching, Chen Hsueh-Shih
Ph.D. Program in Prospective Functional Materials Industry, College of Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Nanomaterials (Basel). 2022 Aug 4;12(15):2683. doi: 10.3390/nano12152683.
An electroluminescent quantum-dot light-emitting diode (QLED) device and a micro QLED device array with a top-emitting structure were demonstrated in this study. The QLED device was fabricated in the normal structure of [ITO/Ag/ITO anode]/PEDOT:PSS/PVK/QDs/[ZnO nanoparticles]/Ag/MoO, in which the semi-transparent MoO-capped Ag cathode and the reflective ITO/metal/ITO (IMI) anode were designed to form an optical microcavity. Compared with conventional bottom-emitting QLED, the microcavity-based top-emitting QLED possessed enhanced optical properties, e.g., ~500% luminance, ~300% current efficiency, and a narrower bandwidth. A 1.49 inch micro QLED panel with 86,400 top-emitting QLED devices in two different sizes (17 × 78 μm and 74 × 40.5 μm) on a low-temperature polysilicon (LTPS) backplane was also fabricated, demonstrating the top-emitting QLED with microcavity as a promising structure in future micro display applications.
本研究展示了一种具有顶部发射结构的电致发光量子点发光二极管（QLED）器件和一个微型QLED器件阵列。QLED器件采用[ITO/Ag/ITO阳极]/PEDOT:PSS/PVK/QDs/[氧化锌纳米颗粒]/Ag/MoO的常规结构制造，其中半透明的MoO覆盖的Ag阴极和反射性的ITO/金属/ITO（IMI）阳极被设计用于形成一个光学微腔。与传统的底部发射QLED相比，基于微腔的顶部发射QLED具有增强的光学性能，例如，亮度提高约500%，电流效率提高约300%，带宽更窄。还在低温多晶硅（LTPS）背板上制造了一个1.49英寸的微型QLED面板，其上有两种不同尺寸（17×78μm和74×40.5μm）的86,400个顶部发射QLED器件，证明了具有微腔的顶部发射QLED在未来微型显示应用中是一种很有前景的结构。
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