基于硅肋结构且电流通过直接键合的砷化镓/硅异质界面注入的1.3微米砷化铟/砷化镓量子点激光器

1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces.

作者信息

Tanabe Katsuaki, Watanabe Katsuyuki, Arakawa Yasuhiko

机构信息

Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.

出版信息

Opt Express. 2012 Dec 10;20(26):B315-21. doi: 10.1364/OE.20.00B315.

DOI:10.1364/OE.20.00B315

PMID:23262867

Abstract

An InAs/GaAs quantum dot laser on a Si rib structure has been demonstrated. The double heterostructure laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without oxide or metal mediation. This Fabry-Perot laser operates with current injection through the GaAs/Si rib interface and exhibits InAs quantum dot ground state lasing at 1.28 μm at room temperature, with a threshold current density of 480 A cm(-2).

摘要

已证明在硅肋结构上的砷化铟/砷化镓量子点激光器。生长在砷化镓衬底上的双异质结构激光结构通过砷化镓/硅直接晶圆键合在无氧化物或金属介导的情况下层转移到图案化的硅衬底上。这种法布里-珀罗激光器通过砷化镓/硅肋界面进行电流注入工作，在室温下于1.28μm处呈现砷化铟量子点基态激光发射，阈值电流密度为480 A cm(-2)。