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硫化钴和氧化钴纳米片的电化学储能性能比较:基于密度泛函理论模拟的实验与理论见解

Comparative electrochemical energy storage performance of cobalt sulfide and cobalt oxide nanosheets: experimental and theoretical insights from density functional theory simulations.

作者信息

Samal Rutuparna, Mondal Soumen, Gangan Abhijeet Sadashiv, Chakraborty Brahmananda, Rout Chandra Sekhar

机构信息

Centre for Nano and Material Sciences, Jain University, Jain Global Campus, Ramanagaram, Bangalore 562112, India.

School of Basic Sciences, Indian Institute of Technology, Bhubaneswar, Odisha 751013, India.

出版信息

Phys Chem Chem Phys. 2020 Apr 15;22(15):7903-7911. doi: 10.1039/c9cp06434f.

Abstract

In this study, we have carried out studies on supercapacitor performance comparing cobalt oxide (Co3O4) with cobalt sulfide (Co3S4) nanosheets grown using a facile electrodeposition approach. We have investigated the origin of enhanced energy storage performance of Co3S4 as compared to Co3O4 both by supported experiments and density functional theory investigations. Cobalt oxide exhibits a specific capacitance of 200 F g-1 at a current density of 2 A g-1, whereas a high specific capacitance of 558 F g-1 was achieved in the case of the Co3S4 nanosheets. The enhanced supercapacitor performance of Co3S4 is due to the high surface area, better wettability and high conductivity of the nanosheets. The asymmetric device exhibited a maximum energy density of 47.3 W h kg-1 with a power density of 2388.4 W kg-1 for Co3S4//MWCNT. The electrochemical impedance spectroscopic analysis revealed that Co3O4 has a substantially bigger semicircle as compared to Co3S4, confirming inferior charge-transfer characteristics in Co3O4. Density functional theory (DFT) simulations revealed that bulk structures of both Co3S4 and Co3O4 have an anti-ferromagnetic (AFM) configuration with Co atoms at the tetrahedral site having an opposite spin (∼2.55 μB each) and those at the octahedral sites being non-magnetic. Co3S4 nanosheets are found to be more conducting due to the presence of higher density of states near the Fermi level and a smaller bandgap compared to Co3O4 which support the observed experimental data on enhanced energy storage performance of Co3S4.

摘要

在本研究中,我们开展了关于超级电容器性能的研究,比较了采用简便电沉积方法生长的氧化钴(Co3O4)和硫化钴(Co3S4)纳米片。我们通过支持性实验和密度泛函理论研究,探究了与Co3O4相比,Co3S4储能性能增强的原因。氧化钴在2 A g-1的电流密度下表现出200 F g-1的比电容,而Co3S4纳米片的比电容高达558 F g-1。Co3S4超级电容器性能的增强归因于纳米片的高表面积、更好的润湿性和高导电性。对于Co3S4//MWCNT不对称器件,其最大能量密度为47.3 W h kg-1,功率密度为2388.4 W kg-1。电化学阻抗谱分析表明,与Co3S4相比,Co3O4有一个大得多的半圆,证实了Co3O4中较差的电荷转移特性。密度泛函理论(DFT)模拟表明,Co3S4和Co3O4的体结构均具有反铁磁(AFM)构型,四面体位置的Co原子具有相反的自旋(各约2.55 μB),八面体位置的Co原子是非磁性的。发现Co3S4纳米片由于在费米能级附近存在更高的态密度且带隙比Co3O4小,因而导电性更强,这支持了关于Co3S4增强的储能性能的实验数据。

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