Ling Jun, Zhang Xulei, Mao Ting, Li Lei, Wang Shilin, Cao Meng, Zhang Jijun, Shi Haozhi, Huang Jian, Shen Yue, Wang Linjun
State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, China Nuclear Power Engineering Co., Ltd, Shenzhen 518124, China.
Department of Automation, Shanghai Jiao Tong University, Shanghai 200240, China.
Materials (Basel). 2020 Mar 27;13(7):1536. doi: 10.3390/ma13071536.
CdTe thin films have been prepared by electrochemical deposition. The morphological, structural, and optical properties of CdTe thin films deposited with different deposition time were investigated, and the influence of film thickness on the photoelectric characteristics of CdTe thin films was studied. At the deposition time of 1.5 h, CdTe thin films had good optical properties and the photocurrent reached 20 μAcm. Furthermore, the Pt/CdS/CdTe/FTO structure was prepared to improve its PEC stability and the photocurrent of 240 μAcm had been achieved.
碲化镉（CdTe）薄膜已通过电化学沉积法制备。研究了不同沉积时间下沉积的碲化镉薄膜的形态、结构和光学性质，并研究了薄膜厚度对碲化镉薄膜光电特性的影响。在沉积时间为1.5小时时，碲化镉薄膜具有良好的光学性质，光电流达到20 μA/cm²。此外，制备了Pt/CdS/CdTe/FTO结构以提高其光电化学稳定性，并实现了240 μA/cm²的光电流。
