Kim Hyun-Seop, Kang Myoung-Jin, Kim Jeong Jin, Seo Kwang-Seok, Cha Ho-Young
School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea.
Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea.
Materials (Basel). 2020 Mar 27;13(7):1538. doi: 10.3390/ma13071538.
This study investigated the effects of a thin aluminum oxynitride (AlON) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson's figures of merit (= f × BV) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.
本研究调查了薄氮氧化铝（AlON）栅极绝缘体对碳化硅基氮化铝镓/氮化镓金属绝缘体半导体高电子迁移率晶体管（MIS-HEMT）电学特性的影响。与传统肖特基栅极HEMT相比，所制备的碳化硅基氮化铝镓/氮化镓MIS-HEMT的栅极泄漏电流和关态漏极电流显著降低，从而提高了击穿电压。在使用凹槽式MIS-HEMT结构时，还研究了栅极凹槽的影响。所制备的MIS-HEMT的约翰逊品质因数（=f×BV）在5.57至10.76 THz·V范围内，这是无场板氮化镓基HEMT的最新值。使用了各种表征方法来研究MIS和凹槽式MIS界面的质量。
