Xie Xinling, Wang Qiang, Pan Maolin, Zhang Penghao, Wang Luyu, Yang Yannan, Huang Hai, Hu Xin, Xu Min
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
Nanomaterials (Basel). 2024 Mar 14;14(6):523. doi: 10.3390/nano14060523.
The stability and gate reliability of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the AlO/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-AlO with the alternating O plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O plasma treatment demonstrated remarkable advantages in higher stability under high-temperature and long-term gate bias stress.
本文系统研究了采用交替O等离子体处理的AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）的稳定性和栅极可靠性。结果发现，AlO/AlGaN界面处的导带偏移提高到了2.4 eV，这有助于抑制栅极漏电流。随时间变化的介质击穿（TDDB）测试结果表明，经过交替O等离子体处理的ALD-AlO具有更好的质量和可靠性。经过交替O等离子体处理的AlGaN/GaN MIS-HEMT在高温和长期栅极偏置应力下具有更高的稳定性，表现出显著优势。
