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通过Rietveld精修和理论建模对W掺杂VO纳米棒聚集体中温度依赖性M相到R相转变的表征

Characterisation of the temperature-dependent M to R phase transition in W-doped VO nanorod aggregates by Rietveld refinement and theoretical modelling.

作者信息

Miao Lei, Peng Ying, Wang Dianhui, Liang Jihui, Hu Chaohao, Nishibori Eiji, Sun Lixian, Fisher Craig A J, Tanemura Sakae

机构信息

Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China.

Division of Physics, Faculty of Pure and Applied Sciences, Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8571, Japan and Structural Materials Science Laboratory, RIKEN SPring-8 Center, RIKEN, 1-1-1 Koto, Hyogo 679-5148, Japan.

出版信息

Phys Chem Chem Phys. 2020 Apr 15;22(15):7984-7994. doi: 10.1039/d0cp01058h.

Abstract

Understanding the mechanism of the insulator-metal transition (IMT) in VO2 is a necessary step in optimising this material's properties for a range of functional applications. Here, Rietveld refinement of synchrotron X-ray powder diffraction patterns is performed on thermochromic V1-xWxO2 (0.0 ≤ x ≤ 0.02) nanorod aggregates over the temperature range 100 ≤ T ≤ 400 K to examine the effect of doping on the structure and properties of the insulating monoclinic (M1) phase and metallic rutile (R) phase. Precise measurement of the lattice constants of the M1 and R phases enabled the onset (Ton) and endset (Tend) temperatures of the IMT to be determined accurately for different dopant levels. First-principles calculations reveal that the observed decrease in both Ton and Tend with increasing W content is a result of Peierls type V-O-V dimers being replaced by linear W-O-V dimers with a narrowing of the band gap. The results are interpreted in terms of the bandwidth-controlled Mott-Hubbard IMT model, providing a more detailed understanding of the underlying physical mechanisms driving the IMT as well as a guide to optimising properties of VO2-based materials for specific applications.

摘要

了解二氧化钒中绝缘体-金属转变(IMT)的机制是优化该材料在一系列功能应用中的性能的必要步骤。在此,对热致变色的V1-xWxO2(0.0≤x≤0.02)纳米棒聚集体在100≤T≤400K的温度范围内进行了同步加速器X射线粉末衍射图谱的Rietveld精修,以研究掺杂对绝缘单斜(M1)相和金属金红石(R)相的结构和性能的影响。对M1相和R相晶格常数的精确测量使得能够准确确定不同掺杂水平下IMT的起始温度(Ton)和结束温度(Tend)。第一性原理计算表明,观察到的Ton和Tend随W含量增加而降低是由于Peierls型V-O-V二聚体被线性W-O-V二聚体取代,且带隙变窄。结果根据带宽控制的Mott-Hubbard IMT模型进行了解释,这为驱动IMT的潜在物理机制提供了更详细的理解,并为优化基于VO2的材料在特定应用中的性能提供了指导。

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