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低温强 Rashba 耦合系统中的手性弛豫

Chirality relaxation in low-temperature strongly Rashba-coupled systems.

作者信息

Verpoort P C, Narayan V

机构信息

Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.

出版信息

J Phys Condens Matter. 2020 Jun 3;32(35). doi: 10.1088/1361-648X/ab85f3.

Abstract

We study the relaxation dynamics of non-equilibrium chirality distributions of charge carriers in Rashba systems. We find that at low temperature inter-Rashba band transitions become suppressed due to the combined effect of the Rashba momentum split and the chiral spin texture of a Rashba system. Specifically, we show that momentum exchange between carriers and the phonon bath is effectively absent at temperatures where the momentum of thermal phonons is less than twice the Rashba momentum. This allows us to identify inter-carrier scattering as the dominant process by which non-equilibrium chirality distributions relax. We show that the magnitude of inter-carrier scattering is strongly influenced by the opposing spin structure of the Rashba bands. Finally, we provide an explicit result for the inter-band relaxation timescale associated with inter-carrier Coulomb scattering. We develop a general framework and assess its implications for GeTe, a bulk Rashba semiconductor with a strong Rashba momentum split.

摘要

我们研究了Rashba系统中电荷载流子非平衡手性分布的弛豫动力学。我们发现,在低温下,由于Rashba动量分裂和Rashba系统的手性自旋纹理的综合作用,Rashba带间跃迁受到抑制。具体而言,我们表明,在热声子动量小于两倍Rashba动量的温度下,载流子与声子浴之间的动量交换实际上不存在。这使我们能够确定载流子间散射是非平衡手性分布弛豫的主要过程。我们表明,载流子间散射的大小受到Rashba带相反自旋结构的强烈影响。最后,我们给出了与载流子间库仑散射相关的带间弛豫时间尺度的明确结果。我们开发了一个通用框架,并评估了其对GeTe(一种具有强Rashba动量分裂的体Rashba半导体)的影响。

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