喷墨打印量子点发光二极管的高效率与稳定性

High efficiency and stability of ink-jet printed quantum dot light emitting diodes.

作者信息

Xiang Chaoyu, Wu Longjia, Lu Zizhe, Li Menglin, Wen Yanwei, Yang Yixing, Liu Wenyong, Zhang Ting, Cao Weiran, Tsang Sai-Wing, Shan Bin, Yan Xiaolin, Qian Lei

机构信息

TCL Research, No. 1001 Zhongshan Park Road, Nanshan District, Shenzhen, 518067, People's Republic of China.

Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, 1219 West Zhongguan Road, Ningbo, 315201, Zhejiang, People's Republic of China.

出版信息

Nat Commun. 2020 Apr 2;11(1):1646. doi: 10.1038/s41467-020-15481-9.

DOI:10.1038/s41467-020-15481-9

PMID:32242016

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7118149/

Abstract

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

摘要

喷墨打印工艺制备的器件效率低下且降解迅速，这阻碍了量子点发光二极管在下一代显示器中的应用。使用适用于喷墨打印工艺的配体钝化量子点表面由阴离子和阳离子欠配位位点引起的陷阱态是一个问题。在此，我们通过采用量子点双离子钝化的理念，首次报道了喷墨打印的量子点发光二极管，其外量子效率超过16%，半衰期超过1721000小时。配体的液相交换满足了喷墨打印工艺大规模生产的要求。并且喷墨打印的量子点发光二极管的性能真正开启了量子点发光二极管在工业应用的大门。