Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama 700-8530, Japan.
Research Institute for Interdisciplinary Science, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama 700-8530, Japan.
Int J Mol Sci. 2020 Apr 1;21(7):2447. doi: 10.3390/ijms21072447.
To investigate organic field-effect transistor (OFET) properties, a new thienoacene-type molecule, 4,14-dihexyldinaphtho[2,3-:2',3'-']anthra[1,2-:5,6-']dithiophene (C6-DNADT), consisting of π-conjugated nine aromatic rings and two hexyl chains along the longitudinal molecular axis has been successfully synthesized by sequential reactions, including Negishi coupling, epoxidation, and cycloaromatization. The fabricated OFET using thin films of C6-DNADT exhibited p-channel FET properties with field-effect mobilities () of up to 2.6 × 10 cm V s, which is ca. three times lower than that of the parent DNADT molecule (8.5 × 10 cm V s). Although this result implies that the installation of relatively short alkyl chains into the DNADT core is not suitable for transistor application, the origins for the FET performance obtained in this work is fully discussed, based on theoretical calculations and solid-state structure of C6-DNADT by grazing incidence wide-angle X-ray scattering (GIWAXS) and atomic force microscopy (AFM) analyses. The results obtained in this study disclose the effect of alkyl chains introduced onto the molecule on transistor characteristics.
为了研究有机场效应晶体管（OFET）的性能，我们成功地合成了一种新的噻吩并[2,3-b:2',3'-d]芴[1,2-b:5,6-b']二噻吩（C6-DNADT），这是一种由π共轭的九个芳香环和两个沿着分子长轴的己基链组成的噻吩并[2,3-b:2',3'-d]芴[1,2-b:5,6-b']二噻吩型分子。通过连续反应，包括Negishi 偶联、环氧化和环化反应，合成了这种新的噻吩并[2,3-b:2',3'-d]芴[1,2-b:5,6-b']二噻吩。使用 C6-DNADT 的薄膜制造的 OFET 表现出 p 通道 FET 特性，场效应迁移率（）高达 2.6×10 cm V s，这比母体 DNADT 分子（8.5×10 cm V s）低约三倍。尽管这一结果表明，将相对较短的烷基链安装到 DNADT 核心中不适合晶体管应用，但根据理论计算和 C6-DNADT 的掠入射广角 X 射线散射（GIWAXS）和原子力显微镜（AFM）分析的固态结构，充分讨论了本工作中获得的 FET 性能的起源。本研究的结果揭示了烷基链引入到分子上对晶体管特性的影响。
