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锯齿形拉长的融合π电子核:一种最大化电荷载流子迁移率的分子设计策略。

Zigzag-Elongated Fused π-Electronic Core: A Molecular Design Strategy to Maximize Charge-Carrier Mobility.

作者信息

Yamamoto Akito, Murata Yoshinori, Mitsui Chikahiko, Ishii Hiroyuki, Yamagishi Masakazu, Yano Masafumi, Sato Hiroyasu, Yamano Akihito, Takeya Jun, Okamoto Toshihiro

机构信息

Department of Advanced Materials Science Graduate School of Frontier Sciences The University of Tokyo 5-1-5 Kashiwanoha Kashiwa Chiba 277-8561 Japan.

Chemistry, Materials and Bioengineering Major Graduate School of Science and Engineering Kansai University 3-3-35 Yamate-cho Suita Osaka 564-8680 Japan.

出版信息

Adv Sci (Weinh). 2017 Nov 15;5(1):1700317. doi: 10.1002/advs.201700317. eCollection 2018 Jan.

DOI:10.1002/advs.201700317
PMID:29375963
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5770660/
Abstract

Printed and flexible electronics requires solution-processable organic semiconductors with a carrier mobility (μ) of ≈10 cm V s as well as high chemical and thermal durability. In this study, chryseno[2,1-:8,7-']dithiophene (ChDT) and its derivatives, which have a zigzag-elongated fused π-electronic core (π-core) and a peculiar highest occupied molecular orbital (HOMO) configuration, are reported as materials with conceptually new semiconducting π-cores. ChDT and its derivatives are prepared by a versatile synthetic procedure. A comprehensive investigation reveals that the ChDT π-core exhibits increasing structural stability in the bulk crystal phase, and that it is unaffected by a variation of the transfer integral, induced by the perpetual molecular motion of organic materials owing to the combination of its molecular shape and its particular HOMO configuration. Notably, ChDT derivatives exhibit excellent chemical and thermal stability, high charge-carrier mobility under ambient conditions (μ ≤ 10 cm V s), and a crystal phase that is highly stable, even at temperatures above 250 °C.

摘要

印刷电子和柔性电子需要具有约10 cm² V⁻¹ s⁻¹的载流子迁移率(μ)以及高化学和热耐久性的可溶液加工有机半导体。在本研究中,报道了具有锯齿形伸长稠合π电子核(π核)和特殊最高占据分子轨道(HOMO)构型的 Chryseno[2,1-:8,7-']二噻吩(ChDT)及其衍生物作为具有概念上新的半导体π核的材料。ChDT及其衍生物通过通用合成方法制备。全面研究表明,ChDT π核在块状晶体相中表现出不断增加的结构稳定性,并且由于其分子形状和特定HOMO构型的组合,不受有机材料永久分子运动引起的转移积分变化的影响。值得注意的是,ChDT衍生物表现出优异的化学和热稳定性、在环境条件下的高电荷载流子迁移率(μ ≤ 10 cm² V⁻¹ s⁻¹)以及即使在高于250°C的温度下也高度稳定的晶相。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/ee501c3ac261/ADVS-5-na-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/00bda4f52d55/ADVS-5-na-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/ee501c3ac261/ADVS-5-na-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/00bda4f52d55/ADVS-5-na-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/1743c22e6f62/ADVS-5-na-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/31f466970b4f/ADVS-5-na-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/252721d09657/ADVS-5-na-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5edb/5770660/ee501c3ac261/ADVS-5-na-g005.jpg

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