Hu Chengpeng, Meng Xiangda, Zhang Mao-Hua, Tian Hao, Daniels John E, Tan Peng, Huang Fei, Li Li, Wang Ke, Li Jing-Feng, Lu Qieni, Cao Wenwu, Zhou Zhongxiang
Department of Physics, Harbin Institute of Technology, Harbin 150001, P. R. China.
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China.
Sci Adv. 2020 Mar 27;6(13):eaay5979. doi: 10.1126/sciadv.aay5979. eCollection 2020 Mar.
Electromechanical coupling in piezoelectric materials allows direct conversion of electrical energy into mechanical energy and vice versa. Here, we demonstrate lead-free (K Na )NbO single crystals with an ultrahigh large-signal piezoelectric coefficient * of 9000 pm V, which is superior to the highest value reported in state-of-the-art lead-based single crystals (~2500 pm V). The enhanced electromechanical properties in our crystals are realized by an engineered compositional gradient in the as-grown crystal, allowing notable reversible non-180° domain wall motion. Moreover, our crystals exhibit temperature-insensitive strain performance within the temperature range of 25°C to 125°C. The enhanced temperature stability of the response also allows the materials to be used in a wider range of applications that exceed the temperature limits of current lead-based piezoelectric crystals.
压电材料中的机电耦合能够实现电能与机械能的直接转换,反之亦然。在此,我们展示了具有9000 pm V超高大信号压电系数d的无铅(K Na)NbO单晶,该值优于最先进的铅基单晶所报道的最高值(约2500 pm V)。我们晶体中增强的机电性能是通过在生长晶体中设计成分梯度来实现的,这使得显著的可逆非180°畴壁运动成为可能。此外,我们的晶体在25°C至125°C的温度范围内表现出对温度不敏感的应变性能。响应增强的温度稳定性还使这些材料能够用于超出当前铅基压电晶体温度限制的更广泛应用中。